data sheet 1 of 9 rev. 04.1, 2016-07-19 pxac201602fc package h-37248-4 thermally-enhanced high power rf ldmos fet 140 w, 28 v, 1880 C 1920 mhz, 2010 C 2025 mhz description the pxac201602fc is a 140-watt ldmos fet for use in multi- standard cellular power amplifer applications in the 1880 to 1920 mhz and 2010 to 2025 mhz frequency bands. it features input and output matching, and a thermally-enhanced package with earless fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. features ? asymmetric doherty design - main: 55 w typ (p 1db ) - peak: 85 w typ (p 1db ) ? broadband internal matching ? pulsed cw performance, 1960 mhz, 28 v - output power at p 1db = 100 w - gain = 18 db - effciency = 55% ? capable of handling 10:1 vswr @ 28 v, 140 w (cw) output power ? integrated esd protection ? human body model class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant ? can be operated with i dq of up to 700 ma (not to exceed maximum ratings limits) rf specifications single-carrier wcdma characteristics (tested in infneon doherty test fxture) v dd = 28 v, v gs(p eak ) = 1.4 v, i dq = 360 ma, p out = 22.5 w average, ? = 2025 mhz, 3gpp wcdma signal, channel band - width = 3.84 mhz, 10 db par @0.01% ccdf. characteristic symbol min typ max unit gain g ps 16.5 17.7 db drain efficiency h d 41 44 % adjacent channel power ratio acpr C28 C26 dbc output par @ 0.01% ccdf 1880 mhz opar 7.0 db output par @ 0.01% ccdf 2025 mhz opar 7.8 db -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 efficiency (%) gain (db), peak/average ratio average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 1880 mhz 3gpp wcdma signal: 10 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c201602fc-gr1a all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! pxac201602fc
data sheet 2 of 9 rev. 04.1, 2016-07-19 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.175 w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.175 w operating gate voltage (main) v ds = 28 v, i dq = 360 ma v gs 2.5 2.71 2.8 v (peak) v ds = 1.2 v, i dq = 0 a v gs 0.9 1.2 1.5 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (doherty, t case = 70c, 100 w cw) r q jc 0.48 c/w ordering information type and version order code package description shipping pxac201602fc v1 r0 pxac201602fcv1r0xtma1 h-37248-4, ceramic open-cavity, earless tape & reel, 50 pcs pxac201602fc v1 r250 PXAC201602FCV1R250xtma1 h-37248-4, ceramic open-cavity, earless tape & reel, 250 pcs pxac201602fc
data sheet 3 of 9 rev. 04.1, 2016-07-19 typical performance (data taken in a reference test fixture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 drain efficiency(%) acp up, acp low (dbc) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 1880 mhz and 2025 mhz. 3gpp wcdma signal, 10 db par, 3.84 mhz bw efficiency acp up acp low 1880 mhz 2025 mhz c201602fc-gr2 30 40 50 60 70 12 14 16 18 20 1650 1750 1850 1950 2050 2150 drain efficiency (%) gain (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 360 ma, p out = 43.5 dbm, 3gpp wcdma signal, 10 db par efficienc y gain c201602fc-gr3 -35 -30 -25 -20 -15 -10 -5 -30 -25 -20 -15 1650 1750 1850 1950 2050 2150 return loss (db) acp up (dbc) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 360 ma, p out = 43.5 dbm, 3gpp wcdma signal, 10 db par return loss a cp up c201602fc-gr4 -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 efficiency (%) gain (db), peak/average ratio average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 2025 mhz 3gpp wcdma signal: 10 db par , 3.84 mhz bw gain efficiency par @ 0.01% ccdf c201602fc-gr1b pxac201602fc
data sheet 4 of 9 rev. 04.1, 2016-07-19 typical performance (cont.) 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 360 ma 1880 mhz 2025 mhz efficienc y gain c201602fc-gr5 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 360 ma, ? = 1880 mhz gain efficienc y 24 v 28 v 32 v c201602fc-gr6a 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 360 ma, ? = 2025 mhz gain efficienc y 24 v 28 v 32 v c201602fc-gr6b -30 -25 -20 -15 -10 -5 0 10 12 14 16 18 20 22 1750 1850 1950 2050 2150 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 360 ma irl gain c201602fc-gr7 pxac201602fc
data sheet 5 of 9 rev. 04.1, 2016-07-19 load pull performance main side pulsed cw signal: 160 sec, 10% duty cycle; 28 v, 360 ma p 1db class ab max output power max pae freq [mhz] zs [ w] zl [ w] gain [db] p out [dbm] p out [w] pae [%] zl [ w] gain [db] p out [dbm] p out [w] pae [%] 1880 3.88 C j12.84 3.96 C j4.18 20.01 48.39 69.02 54.18 7.54 C j1.33 22.43 46.72 46.99 65.35 1900 5.30 C j12.89 4.14 C j4.36 20.21 48.1 64.57 53.31 7.70 C j1.56 22.38 46.36 43.25 61.53 1920 5.84 C j14.94 4.13 C j4.48 20.33 48.32 67.92 55.15 7.03 C j0.76 22.6 46.41 43.75 63.54 2010 11.80 C j17.15 3.84 C j4.53 20.31 48.36 68.55 55.74 5.79 C j0.62 22.76 46.22 41.88 64.2 2025 12.09 C j16.26 3.99 C j4.73 20.4 48.14 65.16 54.0.3 5.26 C j0.81 22.7 46.17 41.40 62.49 peak side pulsed cw signal: 160 sec, 10% duty cycle; 28 v, 540 ma p 1db class ab max output power max pae freq [mhz] zs [ w] zl [ w] gain [db] p out [dbm] p out [w] pae [%] zl [ w] gain [db] p out [dbm] p out [w] pae [%] 1880 4.62 C j9.02 2.53 C j4.95 19.44 50.31 107.40 54.66 5.39 C j2.83 22.15 48.15 65.31 64.38 1900 5.10 C j8.97 2.65 C j4.91 19.87 49.97 99.31 53.40 4.50 C j3.28 21.90 48.47 70.31 61.18 1920 6.65 C j8.28 2.587 C j5.03 19.82 50.07 101.62 53.76 4.31 C j3.12 21.93 48.54 71.45 62.86 2010 10.61 C j5.85 2.48 C j5.17 20.19 50.19 104.47 53.45 3.80 C j3.47 22.46 48.61 72.61 63.49 2025 12.35 C j5.04 2.48 C j5.64 20.34 50.09 102.09 52.31 3.83 C j3.38 22.70 48.26 66.99 61.23 z source z loa d s g1 g2 d1 d2 reference circuit, tuned for 1800 C 2200 mhz dut pxac201602fc v1 reference circuit part no. lta/pxac201602fc v1 pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 find gerber fles for this reference fxture on the infneon web site at ( www.infineon.com/rfpower ) pxac201602fc
data sheet 6 of 9 rev. 04.1, 2016-07-19 reference circuit assembly diagram (not to scale) assembly information component description suggested manufacturer p/n input c101, c104, c106, c107 chip capacitor, 18 pf at c atc800a180jt250t c102 chip capacitor, 0.4 pf at c atc600f0r4bt c103 chip capacitor, 1.6 pf at c atc600f1r6bt c105 chip capacitor, 2.4 pf at c atc800a2r4bt250t c108 chip capacitor, 0.3 pf at c atc600f0r3bt c109, c110 capacitor, 10 f taiyo yuden umk325c7106mm-t r101, r102 resistor, 10 ohm panasonic electronic components erj-3geyj100v r103 resistor, 50 ohm anaren c16a50z4 s1 directional coupler anaren x3c21p1-04s reference circuit (cont.) rf_out rf_in b201602fc_cd_2014-03-11 ro4350, .020 (60) pxac201602fc_in_01 r103 c107 c103 c108 c104 c102 c106 r101 c101 r102 c105 c109 c110 ro4350, .020 (61) pxac201602fc_out_01 c215 c212 c211 c208 c219 c201 c210 c214 c202 c204 c217 c207 c213 pxac201602fc c216 s1 c218 c203 c209 c205 v dd v dd v gg v gg pxac201602fc
data sheet 7 of 9 rev. 04.1, 2016-07-19 reference circuit (cont.) assembly information (cont.) component description suggested manufacturer p/n output c201, c202, c204, c206, c208, c214, c216, c219 capacitor, 10 f taiyo yuden umk325c7106mm-t c203, c218 capacitor, 220 f, 50 v cornell dubilier electronics (cde) sk221m050st c205, c210, c211, c212, c215 chip capacitor, 18 pf at c atc800a180jt250t c207 chip capacitor, 1.5 pf at c atc600f1r5bt c209 chip capacitor, 2.4 pf at c atc800a2r4bt250t c213 chip capacitor, 1.2 pf at c atc600f1r2bt c217 chip capacitor, 2.2 pf at c atc800a2r2bt250t pinout diagram (top view) pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (fange) h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 main peak pxac201602fc
data sheet 8 of 9 rev. 04.1, 2016-07-19 package outline specifications package h-37248-4 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d1, d2 C drain, s (fange) C source, g1, g2 C gate. 5. lead thickness: 0.10 +0.076/C0.025 [.004 +.003/C.001 ]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. find the latest and most complete information tabout products and packaging at the infneon internet page ( www.infineon.com/rfpowe r ) diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a - pxac201602fc
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